* 8.0A and 9.2A, 80V and 100V
* rDS(ON) = 0.27Ω and 0.36Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Character.

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.

IRF120

IRF1205

IRF122

IRF123

IRF100

IRF100B201

IRF100B202

IRF100P218

IRF100S201

IRF101

IRF1010

IRF1010E

IRF1010EL